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Si5858DU
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
FEATURES
V DS (V)
20
R DS(on) ( Ω )
0.039 at V GS = 4.5 V
0.045 at V GS = 2.5 V
0.055 at V GS = 1.8 V
I D (A) a
6
6
6
Q g (Typ.)
6 nC
? Halogen-free According to IEC 61249-2-21
Definition
? LITTLE FOOT ? Plus Power MOSFET
? New Thermally Enhanced PowerPAK ?
ChipFET ? Package
- Small Footprint Area
SCHOTTKY PRODUCT SUMMARY
V F (V)
V KA (V) Diode Forward Voltage
I F (A) a
- Low On-Resistance
- Thin 0.8 mm Profile
? Compliant to RoHS Directive 2002/95/EC
20
0.375 at 1 A
1
APPLICATIONS
PowerPAK ChipFET Dual
? Load Switch for Portable Applications
- Ideal for Boost Circuits
1
A
2
A
3
D
K
8
K
7
K
S
G
4
Marking Code
JB XXX
Lot Traceability
6
D
5
D
1.9
mm
and Date Code
Part # Code
G
Bottom View
Ordering Information: Si5858DU-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise note d
S
N-Channel MOSFET
A
Parameter
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
T C = 25 °C
Symbol
V DS
V KA
V GS
Limit
20
20
±8
6 a
Unit
V
Continuous Drain Current (T J = 150 °C) (MOSFET)
T C = 70 °C
T A = 25 °C
T A = 70 °C
I D
6 a
7.2 b, c
5.8 b, c
Pulsed Drain Current (MOSFET)
I DM
20
A
Continuous Source Current (MOSFET Diode Conduction)
Average Forward Current (Schottky)
Pulsed Forward Current (Schottky)
T C = 25 °C
T A = 25 °C
T C = 25 °C
I S
I F
I FM
6.9
1.9 b, c
1 b
7
8.3
Maximum Power Dissipation (MOSFET)
Maximum Power Dissipation (Schottky)
T C = 70 °C
T A = 25 °C
T A = 70 °C
T C = 25 °C
T C = 70 °C
T A = 25 °C
T A = 70 °C
P D
5.3
2.3 b, c
1.5 b, c
7.8
5
2.1 b, c
1.3 b, c
W
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
Document Number: 73460
S09-2111-Rev. C, 12-Oct-09
T J , T stg
- 55 to 150
260
°C
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